Foundation for Research and Technology Hellas FORTH/ICE-HT
passepartoutInstitute of Chemical Engineering Sciences Ελληνική Έκδοσηpassepartout

Instrument Characteristics

X-Ray Photoelectron Spectroscopy

Model: Particle size analyzer, MasterSizer S, MSS

Analysis Chamber: - Hemispherical electron energy analyser SPECS (LHS/EA10)
- X-ray source, double anode Μg/Al [MgKα (1253.6eV) and AlKα (1486.3eV)]
- Electron gun SPECS EQ 22/35. Electron energies: 0.02-5 KeV
- Sample manipulator with 3 positions, one of which can be heated 900oC

Analysis area: 10x12mm2

Depth analysis: 0-150Å


X-Ray Photoelectron Spectroscopy

Quick Links

X-ray Photoelectron Spectroscopy is one of the basic techniques for non-destructive analysis of solid surfaces under ultra high vacuum conditions [pressure lower than 10-8 mbar]. It is based on the kinetic energy analysis of photoelectrons, which originate mainly from the core levels of the atoms in a solid, when this is exposed to x-rays with energy of about 1-1,5 KeV. The exact Kinetic Energy of the peaks in an XPS spectrum characterises the kind of atoms [qualitative analysis] and their chemical enviroment on the surface [chemical shifts]. The number of electrons detected at each energy is analogue to the concentration of the certain kind of atoms at the analyzed area. [quantitative analysis].

In Auger Electron Spectroscopy (AES) electrons that originate from Auger transitions are detected and recorded, according to their Kinetic Energy, when a solid surface is illuminated by an electron beam (energy 103 - 105 eV). Similarly to XPS, the chemical shifts give information about the type of the chemical bonds and about the charge transfer on the surface. Due to the very small size of the electron beam (~100 mm), this technique can be used for depth profiling in combination with the ion-sputtering gun.


Services Sample properties
  • Surface analysis
  • Quantitative Analysis
  • In situ gas reactions
  • Depth profile analysis
Powders, pellets, solids Max thickness: 3mm




Application Form

Contact Person
V. Dracopoulos


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